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SK hynix Inc.(000660.KS) announced today that it has developed the industry’s first 16Gb DDR5 using its 1c node, the sixth generation of the 10nm process. The company plans to begin mass production within the year, with volume shipments starting next year.

SK hynix develops industry’s first 1c DDR5

This achievement marks a significant step toward extreme scaling closer to the 10nm range in memory process technology.

Advancing 10nm DRAM technology has become increasingly difficult with each generation, but SK hynix has overcome these challenges by refining its design, leveraging its expertise from the previous 1b generation.

To minimize potential errors and build on the success of the well-regarded 1b DRAM, SK hynix extended the 1b platform for the development of 1c.

The new 1c DDR5 offers improved cost efficiency by adopting a new material in certain EUV processes and optimizing the overall EUV application. The company also boosted productivity by more than 30% through design innovations.

With an 11% increase in operating speed to 8Gbps and over 9% better power efficiency, the 1c DDR5 is expected to help high-performance data centers reduce electricity costs by up to 30%, especially as AI advancements drive up power demands.

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), flash memory chips (“NAND flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange.

Editor：Lulu

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