SK hynix has announced a major breakthrough in AI-focused memory technology, becoming the first company globally to ship samples of its new 12-layer HBM4 (High Bandwidth Memory) DRAM to key customers. The company revealed the news on March 19, 2025, highlighting that the samples were delivered ahead of schedule — reinforcing its leadership in the HBM market.

The 12-layer HBM4 boasts the highest capacity and fastest performance ever achieved in AI memory. It delivers an unprecedented data bandwidth of over 2 terabytes per second — fast enough to process more than 400 full-HD movies (5GB each) in just one second. This represents a speed improvement of more than 60% compared to the previous generation, HBM3E.

The new product also incorporates SK hynix's Advanced MR-MUF (Mass Reflow Molded Underfill) process, which was proven in earlier HBM generations. This technology helps prevent chip warpage, improves heat dissipation, and ensures greater product stability — enabling the 12-layer stack to achieve a record 36GB capacity, the highest among current HBM products.

SK hynix has maintained its leadership in AI memory by consistently delivering cutting-edge HBM products on time. After pioneering mass production of HBM3 in 2022, followed by 8-layer and 12-layer HBM3E in 2024, the company now plans to complete mass production preparations for 12-layer HBM4 in the second half of 2025.

"We have enhanced our position as a front-runner in the AI ecosystem following years of consistent efforts to overcome technological challenges in accordance with customer demands," said Justin Kim, President & Head of AI Infra at SK hynix. "We are now ready to smoothly proceed with performance certification and mass production, leveraging our experience as the industry's largest HBM supplier."

With this latest innovation, SK hynix further solidifies its role as a key player in driving next-generation AI advancements, setting new benchmarks for speed, capacity, and reliability in high-performance memory solutions.