Samsung Electronics is ramping up its efforts to regain dominance in the memory chip market with aggressive investments in next-generation DRAM and NAND flash technologies. In the fourth quarter of 2024, the company established a test line for 7th generation (1d) 10nm-class DRAM at its Pyeongtaek Plant 2 (P2), with completion expected in the first quarter of 2025, according to industry reports.

Simultaneous Development of 6th and 7th Generation DRAM

The newly constructed “one path” test line will assess the production potential of Samsung's 7th generation DRAM, targeting mass production by 2026. This development coincides with preparations for mass production of its predecessor, 6th generation (1c) DRAM, which is set to begin in 2025. The company is installing chip-making equipment at Pyeongtaek Plant 4 (P4) and aims to secure internal production approval (PRA) for the 6th generation DRAM by May 2025.

Each month, the test line is expected to process approximately 10,000 wafers. Samsung's proactive establishment of the 7th generation DRAM test line, even before the 6th generation enters full production, highlights its strategy to regain market competitiveness in 2025.

Challenges in DRAM Leadership

Samsung, the world's largest DRAM maker, has faced significant challenges in recent years. It has lost ground in the high-bandwidth memory (HBM) market, essential for AI applications, to rival SK hynix. Additionally, SK hynix has surpassed Samsung in the development speed of 10nm-class 6th generation DRAM.

To counter these setbacks, Samsung is accelerating product development under the leadership of Vice Chairman Jeon Young-hyun. Known for his decisive approach, Jeon now oversees memory operations and Samsung's Advanced Institute of Technology, driving innovation across key products like DRAM.

Expanding Investment in NAND Flash

Samsung is also advancing its NAND flash memory capabilities. It recently installed the industry's first 400-layer NAND (V10) test line at Pyeongtaek Plant 1 and added 286-layer (V9) equipment at Pyeongtaek Plant 4. These initiatives aim to enhance Samsung's position in the memory sector alongside its DRAM advancements.

Strategic Vision for 2025

Samsung's dual focus on DRAM and NAND flash reflects its determination to reclaim leadership in the memory market. By prioritizing next-generation technologies and investing in cutting-edge facilities, Samsung is positioning itself to meet growing global demand for memory chips, particularly in AI and high-performance computing applications.

These developments signal Samsung's commitment to innovation and its aggressive strategy to regain its competitive edge in the semiconductor industry.