Samsung Electronics held a Foundry Forum on the 19th in Germany, where the headquarters of Mercedes-Benz and BMW are located, announcing plans for mass production of cutting-edge 2-nanometer (nm) vehicle semiconductors. This move aims to secure European automakers as customers in response to the increasing demand for advanced semiconductors for electric and autonomous vehicles. 

Samsung Foundry meets with customers and partners in the European market at annual event in Munich

At the forum, Samsung Electronics revealed plans to complete preparations for mass production of 2-nanometer power devices for electric vehicle powertrains by 2026, and expand its portfolio to include industry-first 5-nanometer embedded MRAM (Magnetoresistive Random-Access Memory) processes by 2027. MRAM is a next-generation core power device that operates stably at high temperatures and with fast speed comparable to DRAM, even when the power is turned off, preserving data. Samsung Electronics began mass production of 28-nanometer embedded MRAM products in 2019 and plans to have a 14-nanometer process by 2024.

Samsung Electronics also plans to expand its currently in-production 130-nanometer BCD (Bipolar-CMOS-DMOS) process to 90 nanometers by 2025. BCD is a power semiconductor manufacturing process that combines analog, digital signal control, and high-power management into one. To achieve this, Samsung Electronics will form a consortium with 20 partners specializing in memory and package substrates, as well as testing, to develop differentiated solutions for power devices and high-performance computing.

At a gathering of key customers, Siyoung Choi, President of the Foundry Business Division, stated, "We will develop optimized processes, from AI (Artificial Intelligence) chips for autonomous driving to power devices, to lead the era of electric and autonomous vehicles."

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