German semiconductor maker Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) has announced a major breakthrough in power semiconductor technology by developing the world’s first 300mm gallium nitride (GaN) wafer. This innovation positions Infineon as the first company to master 300mm GaN technology in a scalable, high-volume manufacturing environment, setting the stage for significant growth in the GaN-based power semiconductor market.

Producing chips on 300mm wafers is far more efficient than on 200mm wafers, yielding 2.3 times more chips per wafer. This technological advancement will drive the adoption of GaN-based power semiconductors across industries, including industrial, automotive, consumer electronics, and communications. GaN technology enhances device performance, enabling more efficient, smaller, lighter, and lower-cost solutions for applications like AI systems, solar inverters, chargers, adapters, and motor-control systems.

“This achievement showcases our innovation leadership and the hard work of our global team,” said Jochen Hanebeck, CEO of Infineon Technologies AG. “This breakthrough will transform the industry and unlock the full potential of GaN. Almost a year after acquiring GaN Systems, we are proving our commitment to leading the fast-growing GaN market. As a leader in power systems, Infineon now masters all three key materials: silicon, silicon carbide, and gallium nitride.”

Infineon successfully integrated 300mm GaN wafer production into its Villach (Austria) power fab, leveraging its extensive expertise in 300mm silicon and 200mm GaN manufacturing. This scalable approach will allow Infineon to meet growing market demand, with the GaN market expected to reach several billion USD by the end of the decade.

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This milestone underscores Infineon’s position as a global leader in power systems and IoT solutions. The company’s 300mm GaN technology will support new applications and enhance existing ones, offering cost-effective solutions across a wide range of customer systems. Infineon will publicly showcase the first 300mm GaN wafers at the electronica trade show in November 2024 in Munich.

A key advantage of 300mm GaN technology is its compatibility with existing 300mm silicon manufacturing equipment, allowing Infineon to rapidly scale production. Once fully scaled, 300mm GaN production is expected to achieve cost parity with silicon at the RDS(on) level, making GaN a competitive alternative to silicon in power semiconductors.